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Advanced Power Technology
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Browse every Advanced Power Technology part in the catalog below. For quantity, lead time, alternates or compliance questions, send the requirement directly to Alamo.
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All Advanced Power Technology parts
44 parts
APT60N60SCSG
Power Field-Effect TransistorAdvanced Power TechnologyPower Field-Effect Transistors
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APTGT150H60TG
Insulated Gate Bipolar TransistorAdvanced Power TechnologyInsulated Gate Bipolar Transistors
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APT75GT120JU3
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-ChannelAdvanced Power TechnologyInsulated Gate Bipolar Transistors
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APT75GT120JU2
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-ChannelAdvanced Power TechnologyInsulated Gate Bipolar Transistors
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APT50GT120JU2
Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-ChannelAdvanced Power TechnologyInsulated Gate Bipolar Transistors
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APT35GT120JU2
Insulated Gate Bipolar Transistor, 55A I(C), 1200V V(BR)CES, N-ChannelAdvanced Power TechnologyInsulated Gate Bipolar Transistors
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APT100GT120JU3
Insulated Gate Bipolar Transistor, 140A I(C), 1200V V(BR)CES, N-ChannelAdvanced Power TechnologyInsulated Gate Bipolar Transistors
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APT100GT120JU2
Insulated Gate Bipolar Transistor, 140A I(C), 1200V V(BR)CES, N-ChannelAdvanced Power TechnologyInsulated Gate Bipolar Transistors
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APT20M22JVRU3
Power Field-Effect Transistor, 97A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FETAdvanced Power TechnologyPower Field-Effect Transistors
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APT8024JLL
Power Field-Effect Transistor, 29A I(D), 800V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FETAdvanced Power TechnologyPower Field-Effect Transistors
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APT75GP120J
Insulated Gate Bipolar Transistor, 128A I(C), 1200V V(BR)CES, N-ChannelAdvanced Power TechnologyInsulated Gate Bipolar Transistors
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APT75GN120JDQ3
Insulated Gate Bipolar Transistor, 124A I(C), 1200V V(BR)CES, N-ChannelAdvanced Power TechnologyInsulated Gate Bipolar Transistors
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APT65GP60J
Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-ChannelAdvanced Power TechnologyInsulated Gate Bipolar Transistors
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APT65GP60JDQ2
Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-ChannelAdvanced Power TechnologyInsulated Gate Bipolar Transistors
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APT60M75JVR
Power Field-Effect Transistor, 62A I(D), 600V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FETAdvanced Power TechnologyPower Field-Effect Transistors
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APT50M65JFLL
Power Field-Effect Transistor, 58A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FETAdvanced Power TechnologyPower Field-Effect Transistors
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APT50M50JFLL
Power Field-Effect Transistor, 71A I(D), 500V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FETAdvanced Power TechnologyPower Field-Effect Transistors
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APT50GP60J
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-ChannelAdvanced Power TechnologyInsulated Gate Bipolar Transistors
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APT45GP120J
Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-ChannelAdvanced Power TechnologyInsulated Gate Bipolar Transistors
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APT45GP120JDQ2
Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-ChannelAdvanced Power TechnologyInsulated Gate Bipolar Transistors
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