BLC9H10XS-350AY
Ampleon Netherlands B V
Ampleon Netherlands B V presents the BLC9H10XS-350AY, a top-of-the-line RF Power Field Effect Transistor designed for high performance and reliability. With its N-CHANNEL configuration and COMMON SOURCE design, this transistor is perfect for amplifier applications in the Ultra High Frequency Band. The BLC9H10XS-350AY offers customers unparalleled power gain of 17 dB and a minimum DS breakdown voltage of 108 V, ensuring optimal functionality in any operating environment. Trust Ampleon's expertise and invest in the superior quality of the BLC9H10XS-350AY for all your RF power needs.
The part, clearly identified.
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET The BLC9H10XS-350AY from Ampleon Netherlands B V is listed under RF Power Field-Effect Transistors with PLASTIC/EPOXY packaging and a contact mfr lifecycle status. Contact us for pricing and availability.
Product attributes & parameters
31 verified engineering parameters recordedBring the evidence your project requires.
Share certificate, traceability, packaging, destination and date-code requirements in the RFQ so the sourcing response is useful, not just a price.
Common questions about BLC9H10XS-350AY
What is BLC9H10XS-350AY used for?
Ampleon Netherlands B V presents the BLC9H10XS-350AY, a top-of-the-line RF Power Field Effect Transistor designed for high performance and reliability. With its N-CHANNEL configuration and COMMON SOURCE design, this transistor is perfect for amplifier applications in the Ultra High Frequency Band. The BLC9H10XS-350AY offers customers unparalleled power gain of 17 dB and a minimum DS breakdown voltage of 108 V, ensuring optimal functionality in any operating environment. Trust Ampleon's expertise and invest in the superior quality of the BLC9H10XS-350AY for all your RF power needs. Contact Alamo if you need help validating the right package or alternate.
Can you confirm the available date code?
Yes. Include your date-code preference in the RFQ and we will confirm it with the sourcing response.
Is this part still in production?
The current record shows Contact Mfr. Verification happens against the specific sourcing request.
What is BLC9H10XS-350AY used for?
BLC9H10XS-350AY by Ampleon is an N-channel RF Power FET with a min DS Breakdown Voltage of 108V and a Min Power Gain of 17dB. It operates in the Ultra High Frequency Band, suitable for amplifier applications. The transistor features a Metal-Oxide Semiconductor technology and can withstand temperatures from -40 to 125°C.
What package does BLC9H10XS-350AY come in?
Contact us for package and mounting details of the BLC9H10XS-350AY.
Is BLC9H10XS-350AY still in production, or is it obsolete?
The lifecycle status of the BLC9H10XS-350AY is 'Contact Mfr'. Contact us for the most current availability and alternatives.