EPC2012CENGR
Efficient Power Conversion
Enhance your power system with the EPC2012CENGR by Efficient Power Conversion. This top-quality N-CHANNEL power FET offers superior performance in switching applications, providing a reliable solution for your power needs. With a maximum pulsed drain current of 22 A and a minimum DS breakdown voltage of 200 V, this transistor is designed to deliver optimal efficiency and durability. Trust in Efficient Power Conversion's expertise in FET technology and take your power system to the next level with the EPC2012CENGR.
The part, clearly identified.
Power Field-Effect Transistor, 5A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET The EPC2012CENGR from Efficient Power Conversion is listed under Power Field-Effect Transistors with UNSPECIFIED packaging and a contact mfr lifecycle status. Contact us for pricing and availability.
Product attributes & parameters
27 verified engineering parameters recordedBring the evidence your project requires.
Share certificate, traceability, packaging, destination and date-code requirements in the RFQ so the sourcing response is useful, not just a price.
Common questions about EPC2012CENGR
What is EPC2012CENGR used for?
Enhance your power system with the EPC2012CENGR by Efficient Power Conversion. This top-quality N-CHANNEL power FET offers superior performance in switching applications, providing a reliable solution for your power needs. With a maximum pulsed drain current of 22 A and a minimum DS breakdown voltage of 200 V, this transistor is designed to deliver optimal efficiency and durability. Trust in Efficient Power Conversion's expertise in FET technology and take your power system to the next level with the EPC2012CENGR. Contact Alamo if you need help validating the right package or alternate.
Can you confirm the available date code?
Yes. Include your date-code preference in the RFQ and we will confirm it with the sourcing response.
Is this part still in production?
The current record shows Contact Mfr. Verification happens against the specific sourcing request.
What is EPC2012CENGR used for?
EPC2012CENGR by Efficient Power Conversion is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 22A IDM and 0.1 ohm RDS(on), this GaN-based transistor operates in ENHANCEMENT MODE. With 4 terminals and RECTANGULAR shape, it's suitable for high-power electronic systems.
What package does EPC2012CENGR come in?
Contact us for package and mounting details of the EPC2012CENGR.
Is EPC2012CENGR still in production, or is it obsolete?
The lifecycle status of the EPC2012CENGR is 'Contact Mfr'. Contact us for the most current availability and alternatives.