Part finder/RF Power Field-Effect Transistors/PTE10012
RF Power Field-Effect Transistors
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PTE10012

Ericsson Power Modules Ab

The PTE10012 from Ericsson Power Modules Ab is a RF Power Field-Effect Transistors in the RF Power Field-Effect Transistors category. RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET. It features a Metal-Oxide Semiconductor technology. Lifecycle status: Discontinued. Contact us for pricing and availability.

CERAMIC, METAL-SEALED COFIRED Discontinued Date-code options
MANUFACTUREREricsson Power Modules Ab
AVAILABILITYRequest to verify
LIFECYCLEDiscontinued
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UNIT PRICERequest price
QUANTITYConfirm with RFQ
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Overview

The part, clearly identified.

RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET The PTE10012 from Ericsson Power Modules Ab is listed under RF Power Field-Effect Transistors with CERAMIC, METAL-SEALED COFIRED packaging and a discontinued lifecycle status. Contact us for pricing and availability.

Verification included.Sourcing details are confirmed against your RFQ before response.
Technical record

Product attributes & parameters

23 verified engineering parameters recorded
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Polarity/Channel TypeN-CHANNEL
ConfigurationSINGLE
Transistor ApplicationAMPLIFIER
Surface MountYES
DS Breakdown Voltage-Min65 V
Package ShapeRECTANGULAR
Terminal FormGULL WING
Operating ModeENHANCEMENT MODE
Highest Frequency BandL BAND
Number of Elements1
Number of Terminals8
Package StyleSMALL OUTLINE
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Transistor Element MaterialSILICON
Terminal PositionDUAL
JESD-30 CodeR-CDSO-G8
Qualification StatusNot Qualified
ECCNEAR99
ECCN GovernanceEAR
Generic NumberPTE10012
Manufacturer Package DescriptionSO-8
LifecycleDiscontinued
Quality and documentation

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Share certificate, traceability, packaging, destination and date-code requirements in the RFQ so the sourcing response is useful, not just a price.

Certification references: AS6081 / RoHS / ISO 9001
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Frequently asked questions

Common questions about PTE10012

What is PTE10012 used for?

The PTE10012 from Ericsson Power Modules Ab is a RF Power Field-Effect Transistors in the RF Power Field-Effect Transistors category. RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET. It features a Metal-Oxide Semiconductor technology. Lifecycle status: Discontinued. Contact us for pricing and availability. Contact Alamo if you need help validating the right package or alternate.

Can you confirm the available date code?

Yes. Include your date-code preference in the RFQ and we will confirm it with the sourcing response.

Is this part still in production?

The current record shows Discontinued. Verification happens against the specific sourcing request.

What is PTE10012 used for?

The PTE10012 from Ericsson Power Modules Ab is a RF Power Field-Effect Transistors. RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET. It is used in electronic designs requiring rf power field-effect transistors functionality.

What package does PTE10012 come in?

Contact us for package and mounting details of the PTE10012.

Is PTE10012 still in production, or is it obsolete?

The PTE10012 is Discontinued (obsolete). Remaining stock may be limited. Contact us for the most current availability and alternatives.