Part finder/RF Power Field-Effect Transistors/NPT1012B
RF Power Field-Effect Transistors
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NPT1012B

Nitronex

The NPT1012B from Nitronex is a RF Power Field-Effect Transistors in the RF Power Field-Effect Transistors category. RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET. It features a High Electron Mobility technology. Lifecycle status: Transferred. Contact us for pricing and availability.

CERAMIC, METAL-SEALED COFIRED Transferred Date-code options
MANUFACTURERNitronex
AVAILABILITYRequest to verify
LIFECYCLETransferred
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Overview

The part, clearly identified.

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET The NPT1012B from Nitronex is listed under RF Power Field-Effect Transistors with CERAMIC, METAL-SEALED COFIRED packaging and a transferred lifecycle status. Contact us for pricing and availability.

Verification included.Sourcing details are confirmed against your RFQ before response.
Technical record

Product attributes & parameters

26 verified engineering parameters recorded
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Polarity/Channel TypeN-CHANNEL
ConfigurationSINGLE
Surface MountYES
DS Breakdown Voltage-Min100 V
Package ShapeRECTANGULAR
Terminal FormFLAT
Operating ModeDEPLETION MODE
Highest Frequency BandS BAND
Number of Elements1
Number of Terminals2
Package StyleFLANGE MOUNT
FET TechnologyHIGH ELECTRON MOBILITY
Transistor Element MaterialGALLIUM NITRIDE
Terminal PositionDUAL
JESD-30 CodeR-CDFM-F2
Case ConnectionSOURCE
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Peak Reflow Temperature (Cel)NOT SPECIFIED
Other Names1465-1415
EU RoHS CompliantYes
ECCNEAR99
ECCN GovernanceEAR
Generic NumberNPT1012
Manufacturer Package DescriptionROHS COMPLIANT, AC200BM-F2, 2 PIN
LifecycleTransferred
Quality and documentation

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Share certificate, traceability, packaging, destination and date-code requirements in the RFQ so the sourcing response is useful, not just a price.

Certification references: AS6081 / RoHS / ISO 9001
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Frequently asked questions

Common questions about NPT1012B

What is NPT1012B used for?

The NPT1012B from Nitronex is a RF Power Field-Effect Transistors in the RF Power Field-Effect Transistors category. RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET. It features a High Electron Mobility technology. Lifecycle status: Transferred. Contact us for pricing and availability. Contact Alamo if you need help validating the right package or alternate.

Can you confirm the available date code?

Yes. Include your date-code preference in the RFQ and we will confirm it with the sourcing response.

Is this part still in production?

The current record shows Transferred. Verification happens against the specific sourcing request.

What is NPT1012B used for?

The NPT1012B from Nitronex is a RF Power Field-Effect Transistors. RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET. It is used in electronic designs requiring rf power field-effect transistors functionality.

What package does NPT1012B come in?

Contact us for package and mounting details of the NPT1012B.

Is NPT1012B still in production, or is it obsolete?

The lifecycle status of the NPT1012B is 'Transferred', meaning production has been transferred to another facility or manufacturer; it may still be available. Contact us for the most current availability and alternatives.