Part finder/Power Field-Effect Transistors/SP201
Power Field-Effect Transistors
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SP201

Polyfet R F Devices

Power up your projects with the SP201 by Polyfet R F Devices! This high-quality N-CHANNEL Power Field Effect Transistor offers a maximum Drain Current of 1.2 A and a Power Dissipation of 20 W, making it perfect for a wide range of applications. From amplifiers to power supplies, this Enhancement Mode transistor provides reliable performance and efficiency. Trust in Polyfet R F Devices to deliver top-notch products that exceed expectations. Upgrade your designs with the SP201 and experience the benefits firsthand.

See datasheet Contact Mfr Date-code options
MANUFACTURERPolyfet R F Devices
AVAILABILITYRequest to verify
LIFECYCLEContact Mfr
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UNIT PRICERequest price
QUANTITYConfirm with RFQ
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Overview

The part, clearly identified.

Power Field-Effect Transistor, 1.2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET The SP201 from Polyfet R F Devices is listed under Power Field-Effect Transistors with See datasheet packaging and a contact mfr lifecycle status. Contact us for pricing and availability.

Verification included.Sourcing details are confirmed against your RFQ before response.
Technical record

Product attributes & parameters

16 verified engineering parameters recorded
Polarity/Channel TypeN-CHANNEL
ConfigurationSINGLE
Operating ModeENHANCEMENT MODE
Number of Elements1
Drain Current-Max (Abs) (ID)1.2 A
Power Dissipation-Max (Abs)20 W
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Sub CategoryFET General Purpose Power
Operating Temperature-Max150 Cel
Drain Current-Max (ID)1.2 A
Other Names22-SP201
EU RoHS CompliantYes
ECCNEAR99
ECCN GovernanceEAR
Generic NumberSP201
LifecycleContact Mfr
Quality and documentation

Bring the evidence your project requires.

Share certificate, traceability, packaging, destination and date-code requirements in the RFQ so the sourcing response is useful, not just a price.

Certification references: AS6081 / RoHS / ISO 9001
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Frequently asked questions

Common questions about SP201

What is SP201 used for?

Power up your projects with the SP201 by Polyfet R F Devices! This high-quality N-CHANNEL Power Field Effect Transistor offers a maximum Drain Current of 1.2 A and a Power Dissipation of 20 W, making it perfect for a wide range of applications. From amplifiers to power supplies, this Enhancement Mode transistor provides reliable performance and efficiency. Trust in Polyfet R F Devices to deliver top-notch products that exceed expectations. Upgrade your designs with the SP201 and experience the benefits firsthand. Contact Alamo if you need help validating the right package or alternate.

Can you confirm the available date code?

Yes. Include your date-code preference in the RFQ and we will confirm it with the sourcing response.

Is this part still in production?

The current record shows Contact Mfr. Verification happens against the specific sourcing request.

What is SP201 used for?

SP201 by Polyfet R F Devices is a single N-channel power FET with 1.2A max drain current and 20W max power dissipation. Ideal for applications requiring enhancement mode operation, such as in METAL-OXIDE SEMICONDUCTOR technology at up to 150°C operating temperature.

What package does SP201 come in?

Contact us for package and mounting details of the SP201.

Is SP201 still in production, or is it obsolete?

The lifecycle status of the SP201 is 'Contact Mfr'. Contact us for the most current availability and alternatives.