UF3C065030K4S
United Silicon Carbide
United Silicon Carbide's UF3C065030K4S is a game-changer in the Power Field Effect Transistors category. With a minimum DS Breakdown Voltage of 650V and a maximum Drain Current of 85A, this N-Channel transistor offers unmatched performance and reliability for switching applications. Its single configuration with a built-in diode ensures seamless operation while its Junction technology guarantees efficiency. Whether you're in the automotive, industrial, or renewable energy sector, this transistor delivers superior power management capabilities that will elevate your projects to new heights. Trust United Silicon Carbide for cutting-edge solutions that make a difference.
The part, clearly identified.
Power Field-Effect Transistor, 85A I(D), 650V, 0.035ohm, 1-Element, N-Channel, Silicon Carbide, Junction FET, TO-247 The UF3C065030K4S from United Silicon Carbide is listed under Power Field-Effect Transistors with PLASTIC/EPOXY packaging and a contact mfr lifecycle status. Contact us for pricing and availability.
Product attributes & parameters
32 verified engineering parameters recordedBring the evidence your project requires.
Share certificate, traceability, packaging, destination and date-code requirements in the RFQ so the sourcing response is useful, not just a price.
Common questions about UF3C065030K4S
What is UF3C065030K4S used for?
United Silicon Carbide's UF3C065030K4S is a game-changer in the Power Field Effect Transistors category. With a minimum DS Breakdown Voltage of 650V and a maximum Drain Current of 85A, this N-Channel transistor offers unmatched performance and reliability for switching applications. Its single configuration with a built-in diode ensures seamless operation while its Junction technology guarantees efficiency. Whether you're in the automotive, industrial, or renewable energy sector, this transistor delivers superior power management capabilities that will elevate your projects to new heights. Trust United Silicon Carbide for cutting-edge solutions that make a difference. Contact Alamo if you need help validating the right package or alternate.
Can you confirm the available date code?
Yes. Include your date-code preference in the RFQ and we will confirm it with the sourcing response.
Is this part still in production?
The current record shows Contact Mfr. Verification happens against the specific sourcing request.
What is UF3C065030K4S used for?
UF3C065030K4S by United Silicon Carbide is a N-CHANNEL FET with 650V DS Breakdown Voltage. It has 230A IDM and 120mJ EAS, ideal for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.035 ohm RDS(on) and can handle up to 441W power dissipation.
What package does UF3C065030K4S come in?
Contact us for package and mounting details of the UF3C065030K4S.
Is UF3C065030K4S still in production, or is it obsolete?
The lifecycle status of the UF3C065030K4S is 'Contact Mfr'. Contact us for the most current availability and alternatives.