Part finder/Power Field-Effect Transistors/UJ4SC075006K4S
Power Field-Effect Transistors
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UJ4SC075006K4S

United Silicon Carbide

Upgrade your power systems with the UJ4SC075006K4S by United Silicon Carbide, a top-quality Power Field Effect Transistor that guarantees reliability and efficiency. With its N-CHANNEL design and built-in diode configuration, this transistor is ideal for switching applications, offering a minimum DS Breakdown Voltage of 750V and a maximum Drain Current of 120A. Say goodbye to power limitations and hello to optimized performance with this versatile component, perfect for a wide range of industrial and automotive uses. Trust in United Silicon Carbide for cutting-edge technology that delivers superior results every time.

PLASTIC/EPOXY Active Date-code options
MANUFACTURERUnited Silicon Carbide
AVAILABILITYRequest to verify
LIFECYCLEActive
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Overview

The part, clearly identified.

Power Field-Effect Transistor, 120A I(D), 750V, 0.0074ohm, 1-Element, N-Channel, Silicon Carbide, Junction Cascode FET, TO-247 The UJ4SC075006K4S from United Silicon Carbide is listed under Power Field-Effect Transistors with PLASTIC/EPOXY packaging and a active lifecycle status. Contact us for pricing and availability.

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Technical record

Product attributes & parameters

33 verified engineering parameters recorded
Package Body MaterialPLASTIC/EPOXY
Polarity/Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
Transistor ApplicationSWITCHING
Surface MountNO
DS Breakdown Voltage-Min750 V
Package ShapeRECTANGULAR
Terminal FormTHROUGH-HOLE
Operating ModeDEPLETION MODE
Number of Elements1
Pulsed Drain Current-Max (IDM)588 A
Avalanche Energy Rating (Eas)316 mJ
Number of Terminals4
Power Dissipation-Max (Abs)714 W
Package StyleFLANGE MOUNT
FET TechnologyJUNCTION CASCODE
Operating Temperature-Max175 Cel
Transistor Element MaterialSILICON CARBIDE
Operating Temperature-Min-55 Cel
Drain Current-Max (ID)120 A
Drain-source On Resistance-Max.0074 ohm
Terminal PositionSINGLE
JESD-30 CodeR-PSFM-T4
Case ConnectionDRAIN
JEDEC-95 CodeTO-247
Feedback Cap-Max (Crss)4 pF
Other Names2312-UJ4SC075006K4S
EU RoHS CompliantYes
REACH CompliantYes
ECCNEAR99
ECCN GovernanceEAR
Generic NumberUJ4SC075006
LifecycleActive
Quality and documentation

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Certification references: AS6081 / RoHS / ISO 9001
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Frequently asked questions

Common questions about UJ4SC075006K4S

What is UJ4SC075006K4S used for?

Upgrade your power systems with the UJ4SC075006K4S by United Silicon Carbide, a top-quality Power Field Effect Transistor that guarantees reliability and efficiency. With its N-CHANNEL design and built-in diode configuration, this transistor is ideal for switching applications, offering a minimum DS Breakdown Voltage of 750V and a maximum Drain Current of 120A. Say goodbye to power limitations and hello to optimized performance with this versatile component, perfect for a wide range of industrial and automotive uses. Trust in United Silicon Carbide for cutting-edge technology that delivers superior results every time. Contact Alamo if you need help validating the right package or alternate.

Can you confirm the available date code?

Yes. Include your date-code preference in the RFQ and we will confirm it with the sourcing response.

Is this part still in production?

The current record shows Active. Verification happens against the specific sourcing request.

What is UJ4SC075006K4S used for?

UJ4SC075006K4S by United Silicon Carbide is a N-CHANNEL FET with 750V DS Breakdown Voltage. It has a max IDM of 588A and EAS of 316mJ, ideal for SWITCHING applications. Operating in DEPLETION MODE, it offers 0.0074 ohm Drain-Source On Resistance and can handle up to 120A Drain Current efficiently.

What package does UJ4SC075006K4S come in?

Contact us for package and mounting details of the UJ4SC075006K4S.

Is UJ4SC075006K4S still in production, or is it obsolete?

The UJ4SC075006K4S is currently in production (Active). Contact us for the most current availability and alternatives.